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Application of SKP for in situ monitoring of ion mobility along insulator/insulator interfaces

机译:SKP在绝缘子/绝缘子界面沿离子迁移率原位监测中的应用

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摘要

From corrosion to batteries and super-capacitors, mobility of ions at interfaces, a pre-requisite for many electrochemical processes, plays a key role in a great number of applications. In this paper we show for the first time that the Scanning Kelvin Probe (SKP) technique can be applied for studying ion mobility along any kind of insulator/insulator interface. As across these interfaces high biases can be applied, the determination of the mobility constants should be possible. Since for practically all kinds of interfaces model samples based on insulating substrate can be prepared, this is a break-through for studying ion mobility along any kind of interface, as well as mobility of ions adsorbed on a surface. While it has been shown nearly two decades ago that delamination of polymer/metal interfaces and also diffusion or migration of ions along such interfaces can be monitored in situ by SKP, no attempts have been made so far to apply this technique for investigating the mobility of ions also along interfaces between insulating materials. Here we show that this is possible. This opens up the use of SKP for a vast field of research that is of critical importance for many applications.
机译:从腐蚀到电池和超级电容器,界面上离子的迁移是许多电化学过程的先决条件,在众多应用中起着关键作用。在本文中,我们首次展示了扫描开尔文探针(SKP)技术可用于研究沿任何类型的绝缘体/绝缘体界面的离子迁移率。由于可以跨这些界面施加高偏差,因此应该可以确定迁移率常数。由于实际上可以制备各种基于绝缘基板的界面模型样品,因此这是研究沿任何界面的离子迁移率以及吸附在表面上的离子迁移率的突破。尽管近二十年前已经表明,SKP可以现场监测聚合物/金属界面的分层以及离子沿这种界面的扩散或迁移,但迄今为止,还没有尝试将这种技术用于研究金属的迁移率。离子也沿着绝缘材料之间的界面。在这里,我们证明这是可能的。这为在许多研究中至关重要的广阔研究领域开辟了SKP的应用。

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