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The kinetic H/D isotope effect in electroless copper plating. An EQCM study

机译:化学镀铜中的动力学H / D同位素效应。 EQCM研究

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The effect of H/D substitution in water and formaldehyde on the rate of electroless copper plating and either cathodic deposition or anodic dissolution of copper were studied by EQCM. The kinetic H/D isotope effect (k(H)/k(D)) ca. 4.5 was found for H/D substitution in formaldehyde and of about 1 when H2O was replaced by D2O under open-circuit conditions, indicating the rupture of C-H bond of formaldehyde to be the rate-limiting step in electroless copper plating. The k(H)/k(D) value up to 3 in anodic copper dissolution and cathodic reduction of Cu(II) ions for H/D substitution in water suggests that water molecules or hydroxyl ions are involved in the formation of intermediate oxy-(hydroxy-) species. Some synergetic features of mutual enhancement of anodic formaldehyde oxidation and cathodic Cu(II) reduction half-reactions in electroless copper plating are discussed in terms of both an oxygen-containing Cu(I) intermediate and preferable surface structure formation. [References: 41]
机译:通过EQCM研究了水和甲醛中H / D取代对化学镀铜速率以及铜的阴极沉积或阳极溶解的影响。动力学H / D同位素效应(k(H)/ k(D))约发现甲醛中的H / D取代为4.5,在开路条件下用D2O取代H2O时约为1.,这表明甲醛的C-H键断裂是化学镀铜的限速步骤。阳极铜溶解和在水中进行H / D取代的Cu(II)离子的阴极还原中,k(H)/ k(D)值最高为3,这表明水分子或氢氧根离子参与了中间氧原子的形成。 (羟基)种类。从含氧的Cu(I)中间体和优选的表面结构形成的角度,讨论了化学镀铜中阳极甲醛氧化相互促进和阴极Cu(II)还原半反应相互促进的一些协同特征。 [参考:41]

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