Direct preparation of 1.35-eV-bandgap CuO:S film by chemical bath deposition

摘要

500-nm -thick-CuO:S film has been prepared on a glass substrate by a chemical bath deposition in an aqueous solution containing copper(II) nitrate, ammonium nitrate, and ammonia water at 323-343 K. The CuO:S films possessed a monoclinic lattice and bandgap energy of 1.35 eV, which were characteristic of semiconductor CuO. The deposition mechanism was briefly discussed from the potential- p H diagram thermodynamically calculated for the copper-ammonia-water system.