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Improved light extraction of GaN-based green light-emitting diodes with an antireflection layer of ZnO nanorod arrays

机译:具有ZnO纳米棒阵列的抗反射层的GaN基绿色发光二极管的改进光提取

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摘要

We investigate the effect of double ZnO nanorod layers on the light extraction of green light-emitting diodes (LEDs). The double ZnO nanorod layers with a step gradient of the refractive index are formed as antireflection layers on the transparent electrode of LEDs. The light output power of the green LEDs with ZnO nanorods is increased by 42.9% at an injection current of 20 mA compared to those without ZnO nanorods. The increase in light output power is mostly attributed to a reduction in Fresnel reflection by antireflection layers of ZnO nanorods on green LEDs.
机译:我们研究了双ZnO纳米棒层对绿色发光二极管(LED)的光提取的影响。在LED的透明电极上形成具有折射率的阶跃梯度的双ZnO纳米棒层作为抗反射层。与没有ZnO纳米棒的绿色LED相比,具有ZnO纳米棒的绿色LED的光输出功率在20 mA的注入电流下增加了42.9%。光输出功率的增加主要归因于绿色LED上的ZnO纳米棒的抗反射层减少的菲涅耳反射。

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