Highly oriented VO_2 thin films prepared by electrodeposition

摘要

Ultrathin VO_2 films were grown on Si(001) substrates by the electrodeposition technique. The method includes the annealing of a xerogel precursor deposit, mainly composed of V_2O_5, at 500°C. The effective formation of the monoclinic VO_2 phase, after annealing, is strongly dependent on the time of storage in air. The V O_2 films so obtained have [011]-preferred orientation and undergo a metal-insulator transition. The resistance change as a function of temperature is characterized by a broad hysteresis where two transition temperatures can be identified: T_1 ≈55°C and T_2 ≈77.5°C.