LaNiO3 as Contact Material for (Ba, Sr) TiO3 Dielectric Thin Films

摘要

LaNiO3 (LNO) films were used as conductivebottom and top electrodes for the fabrication of (Ba0.5Sr0.5) TiO3(BST) capacitors on silicon substrates. LNO as well as BST filmswere grown in situ using a pulsed laser deposition technique withno subsequent heating or oxygenation treatments. Capacitanceand leakage current measurements of BST films were carried outusing LNO/BST/LNO/Si structures. Using these measurements,the dielectric constant and leakage current of BST films were~250 and ~10-8 A/cm2, respectively. The results obtained in thepresent study suggest that LNO is a good contact electrodematerial for BST films in the fabrication of BST capacitors withgood structural and electrical properties.