Recently, it has been suggested that the existence of Certain oxygen-containing chemical groups at copper/polymer interfaces aids copper ionization and its subsequent diffusion into these polymers. In the present study, poly(paraxylylene-N) or Parylene-N was selected for copper diffusion studies. It was demonstrated that no copper ion penetration was detected in the Parylene-N films under bias temperature stressing conditions of 150 deg C and 0.5 MV/cm. The present finding suggests that one may control copper penetration by employing dielectrics or passivation layers devoid of oxygen in the multilevel interconnect metallization scheme.
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