Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer

摘要

In this study, distributed charge trapping centers molybdenum silicide nanodots, are demonstrated. The Mo silicide nanodots were formed in the rapid thermal annealed mixed Mo-Si layer deposited by a dual electron gun system. A significant memory effect is observed through the electrical measurements, which is attributed to the formation of Mo silicide nanodots. In addition, the memory window is large enough to be identified as logic level "0" and "1" for the application on nonvolatile memory. The manufacture processes are simple and compatible with the conventional semiconductor manufacturing processes.