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首页> 外文期刊>Electrochemical and solid-state letters >Preparation of Manganese Thin Film in Room-Temperature Butylmethylpyrrolidinium Bis(trifluoromethylsulfony)imide Ionic Liquid and Its Application for Supercapacitors
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Preparation of Manganese Thin Film in Room-Temperature Butylmethylpyrrolidinium Bis(trifluoromethylsulfony)imide Ionic Liquid and Its Application for Supercapacitors

机译:室温丁基甲基吡咯烷鎓双(三氟甲基磺化)酰亚胺离子液体中锰薄膜的制备及其在超级电容器中的应用

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The butylmethylpyrrolidinium bis(trifluoromethylsulfony)imide (BMP-NTf_2) ionic liquid was found to have a very wide potential window of 4.5 V, making it capable of being a medium for electrodepositing metallic Mn thin film. By using an electrochemical process, block manganese counter electrode was dissolved in the ionic liquid to generate divalent Mn, which was subsequently cathodically deposited on the nickel substrate. The current efficiency of this process was confirmed to be extremely high (close to 100 percent). The Mn thin film can be oxidized to manganese oxide by cyclic voltammetry in Na_2SO_4 electrolyte. The obtained manganese oxide exhibited an excellent pseudo-capacitive performance and possessed a satisfactory specific capacitance of 265 F/g at a moderate cyclic voltammetric sweep rate of 25 mV/s.
机译:发现丁基甲基吡咯烷鎓双(三氟甲基磺酸)酰亚胺(BMP-NTf_2)离子液体具有4.5 V的非常宽的电势窗,使其能够用作电沉积金属Mn薄膜的介质。通过使用电化学方法,将块状锰对电极溶解在离子液体中以生成二价Mn,随后将其阴极沉积在镍基板上。确认该工艺的当前效率极高(接近100%)。可以通过循环伏安法在Na_2SO_4电解质中将Mn薄膜氧化为氧化锰。所获得的锰氧化物表现出优异的拟电容性能,并且在25 mV / s的中等循环伏安扫描速率下具有令人满意的265 F / g的比电容。

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