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Contrast Mechanism of Ferroelectric Domains in Scanning Capacitance Microscopy

机译:扫描电容显微镜中铁电畴的对比机理

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The contrast mechanism of the scanning capacitance microscopy (SCM) to exhibit the ferroelectric domain structures is demonstrated. An image, developed by the mapping of differential capacitance in a virgin SrBi_2Ta_2O_9 (SET) thin film, was observed and three sharp contrast states of white, black, and gray were revealed. A hysteresis loop depicting the opposing polarities at zero bias was obtained by local measurement and, subsequently, the hysteretic capacitance-voltage curves, as the characteristic of domain switching, were acquired by integrating the calibrated differentiation capacitance. It is concluded that the white and black contrast in SCM images are due to the antiparallel 180 deg domains whereas the gray contrast is due to the trivial differential capacitance variation. These results strongly suggest that the local capacitance variation can be correlated well with the polarities of polarizations in nanoscale domains.
机译:展示了显示铁电畴结构的扫描电容显微镜(SCM)的对比机理。观察到由原始SrBi_2Ta_2O_9(SET)薄膜中的差分电容映射所形成的图像,并揭示了白色,黑色和灰色的三种鲜明的对比状态。磁滞回线通过局部测量获得了零偏压下的相对极性,随后,通过积分校准的微分电容,获得了磁滞电容-电压曲线,作为磁畴切换的特性。结论是,SCM图像中的白色和黑色对比度归因于反向平行的180度域,而灰色对比度则归因于微分的差分电容变化。这些结果强烈表明,局部电容变化可以与纳米级域中的极化极性很好地相关。

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