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首页> 外文期刊>Electrical engineering in Japan >Low-Energy Electron Beam Induced Charging and Secondary Electron Emission Properties of FEP Film Used on Satellite Surfaces
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Low-Energy Electron Beam Induced Charging and Secondary Electron Emission Properties of FEP Film Used on Satellite Surfaces

机译:卫星表面用FEP膜的低能电子束感应充电和二次电子发射特性

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摘要

Many kinds of insulating materials are used outside a spacecraft. They include FEP films, polyimide films, and so on, and are used as thermal control materials. These materials are exposed to a charged-particle environment around the spacecraft. Thus then become charged due to charged particles, especially electrons. It has been pointed out that charging of these materials is likely to cause discharges on the surfaces. From this viewpoint, we investigated the charging potential characteristics of 127-μm-thick FEP film, a typical thermal control material, by exposing it to electron irradiation at various energies below 20 keV. In the dependence of the charging potential on the electron energy, we found that the electron energy at which no charge-up occurs is about 2.7 keV. This appears to be the energy at the which secondary electron emission yield becomes unity. This indicates that electron irradiation of FEP film with energies lower than 2.7 keV induces positive charging. From the charge decay characteristics after electron irradiation, the volume resistivity of the film was also obtained as a function of the electric fields in the bulk of the FEP film.
机译:在航天器外部使用了多种绝缘材料。它们包括FEP膜,聚酰亚胺膜等,并用作热控制材料。这些材料暴露在航天器周围的带电粒子环境中。因此,由于带电粒子(尤其是电子)而带电。已经指出,这些材料的充电很可能引起表面放电。从这个角度出发,我们通过将厚度为127μm的FEP薄膜(一种典型的热控制材料)暴露于20 keV以下的各种能量下的电子辐照下,研究了其充电电位特性。根据充电电位对电子能量的依赖性,我们发现不发生充电的电子能量约为2.7 keV。这似乎是二次电子发射产率变为单位的能量。这表明能量低于2.7 keV的FEP膜的电子辐照会引起正电荷。从电子辐照后的电荷衰减特性,还可以得到薄膜的体积电阻率,它是FEP薄膜主体中电场的函数。

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