3-D ICs: Progress Updates, Reliability Concerns, and Failure Mechanisms

摘要

The introduction of 3-D ICs with through-silicon vias (TSVs) remains driven by performance need coupled with the higher cost of lithography as the industry moves toward the next technology nodes. While some applications, such as memory, are anticipated to be in production by the end of 2014, cost, reliability, technical, and business issues compared to other alternatives limit high-volume production in many applications.