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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Hysteretic Current-Voltage Characteristics and Memristive Behaviors in Agl Nano-Particles Assembly
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Hysteretic Current-Voltage Characteristics and Memristive Behaviors in Agl Nano-Particles Assembly

机译:Agl纳米颗粒组装中的磁滞电流电压特性和忆阻行为

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This paper reports obvious hysteretic current-voltage (I-V) characteristics and memristive behaviors of bulk silver iodide (Agl) nano-particles assembly, obtained using a chemical reaction method. According to the as-obtained stable bipolar I-V plots, resistance ratio between high resistance state and low resistance state was measured to be over 100 on a sandwich structure of Ag/Agl/Ag. Dependences of/-V loops on voltage scan rate (0.1,1,10 and 100 V/s), voltage range (0.9,1.2,1.8 and 3.25 V) and testing temperature (—50, —25, 0, 25, 50°C) were investigated. An electrochemical redox reaction of I_2 on the interface between Ag electrode and Agl electrolyte was suggested for explanation. This model was further confirmed by applying unidirectional voltage scan, asymmetric voltage and results from sandwich structure using Pt electrodes.
机译:本文报道了使用化学反应方法获得的块状碘化银(Agl)纳米颗粒组件的明显的滞后电流-电压(I-V)特性和忆阻行为。根据所获得的稳定的双极I-V图,在Ag / Agl / Ag的夹心结构上测得高电阻状态和低电阻状态之间的电阻比超过100。 / -V回路与电压扫描速率(0.1、1、10和100 V / s),电压范围(0.9、1.2、1.8和3.25 V)和测试温度(—50,—25、0、25、50)的相关性°C)进行了研究。为了解释,建议在Ag电极和Agl电解质之间的界面上进行I_2的电化学氧化还原反应。通过应用单向电压扫描,不对称电压以及使用Pt电极的夹层结构的结果进一步证实了该模型。

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