Chlorine Radical Doping of a Few Layer Graphene with Low Damage

摘要

We present a graphene plasma doping method using chlorine radicals generated in an inductively coupled plasma (ICP) with a double mesh grid system. Raman spectroscopy and sheet resistance measurement showed that this doping method is non-destructive and controllable approach for the p-type graphene layer doping method. And, by using a chlorine trap-doping method, the sheet resistance could be decreased to 76% at an optimized condition for the tri-layer graphene. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. All rights reserved.