Direct Bandgap Material Based on Thin Film of Te_(97)Ga_3 Nanoparticles

摘要

Thin film of Te_(97)Ga_3 nanoparticles has been synthesized using the E-beam evaporation method. The sample was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Photoluminescence (PL) and Raman spectroscopy. XRD result of the deposited film suggests a polycrystalline structure, whereas, the SEM images display uniform morphology with nanoparticles of size around 15 nm. A direct bandgap (Eg) has been observed in the as-synthesized thin film, which is different to that of the microstructure counterpart. Photoluminescence and Raman spectra for this thin film were also studied. The obtained results on this Te_(97)Ga_3 nanomaterial especially its direct bandgap might be useful for development of optical disks and other semiconducting devices.