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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD
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Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD

机译:真空紫外光化学气相沉积低k绝缘层的沟槽填充特性

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Photo-induced deposition of SiOCH thin films and their trench filling properties are discussed. Octamethyl-cycloterasiloxan (OMCTS) was used as a precursor and Xe-2 excimer lamp was used as a light source. The deposition temperature was 80 degrees C and the reactor pressure was maintained at 38.5 Pa. The relative permittivity of as-deposited film was 7.9. Due to the UV cure process, those OH-related bonds in the film were significantly decreased. The k-value of the UV cure film was 2.1. Photo-induced SiOCH was employed to achieve bottom-up filling of high-aspect-ratio features (A/S > 7.5). (C) 2016 The Electrochemical Society. All rights reserved.
机译:讨论了SiOCH薄膜的光诱导沉积及其沟槽填充性能。八甲基-环四硅氧烷(OMCTS)被用作前体,而Xe-2准分子灯被用作光源。沉积温度为80℃,反应器压力保持在38.5Pa。沉积膜的相对介电常数为7.9。由于采用紫外线固化工艺,薄膜中那些与OH相关的键明显减少。 UV固化膜的k值为2.1。使用光诱导SiOCH来实现高纵横比特征的自底向上填充(A / S> 7.5)。 (C)2016年电化学学会。版权所有。

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