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Exploring Alternative Metals to Cu and W for Interconnects Applications Using Automated First-Principles Simulations

机译:使用自动第一性原理模拟探索互连应用中的铜和钨替代金属

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摘要

The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved.
机译:已经使用自动化的第一性原理模拟研究了基本金属和铜基二元合金的整体性能,以评估它们替代铜和钨作为即将到来的CMOS技术节点中的互连线的潜力。基于其内聚能和电子性质的筛选候选物的固有性质已被用作反映其电阻率和对电迁移敏感性的度量。使用这些值,就铜和钨合金而言,已将合金的“性能”作为基准。事实证明,对于某些系统,将Cu与其他元素合金化会降低电迁移的趋势。然而,这样做是以降低合金相对于块状金属的电导率为代价的。 (C)2014年电化学学会。版权所有。

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