Enhanced Performance of GaInN LEDs by Abrupt Mg Doped p-AlGaN Electron Blocking Layer

摘要

Performance improvements in GaInN blue light-emitting-diodes (LEDs) including decreased wavelength shift, enhanced quantum efficiency, and reduced operating voltage are obtained by an abruptly and heavily Mg-doped p-AlGaN electron blocking layer. Moreover, the commonly observed efficiency collapse at cryogenic temperatures for conventional LEDs is not found in abrupt doped LEDs. Under high level injection conditions, the conventional LEDs have much higher electric field in the p-type neutral region than the abruptly doped LEDs at cryogenic temperatures. The higher electric field leads to the greater electron leakage, as well as the cause of efficiency collapse. (C) 2014 The Electrochemical Society. All rights reserved.