Reliability of III-V based heterojunction bipolar transistors

摘要

This paper reviews the reliability of III-V based heterojunction bipolar transistors (HBTs). These devices have many potential advantages over other solid-state microwave devices. However. because of the tradeoff between performance andreliability. they are not being used to any great extent in power microwave applications. In the type of III-V HBT device most fully developed. the AlGaAs GaAs HBT. leakage currents play a major role in the dominant mode of degradation. Becauselow-frequency noise is related to these leakage currents it has been used extensively in the analysis of the performance and reliability limitations of these devices. The reliability of other types of III-V HBT devices, such as InGaP/GaAs and InP baseddevices. is also discussed.