Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

摘要

Room temperature deposition in H{sub}2SiF{sub}6 solution, i.e., liquid phase deposition (LPD), followed by furnace oxidation (FO) is first used to prepare fluorinated thin oxides (LPD/FO). The amount of fluorine existing in the gate oxide iscontrolled by varying the LPD time in this work. A turnaround breakdown behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improvement in oxide breakdowncharacteristics.