POWER MOSFETs CONTINUE TO EVOLVE, THANKS TO WAFER THINNING AND INNOVATIVE PACKAGING

摘要

New switching power transistors using wide-bandgap semiconductors, such as SiC (silicon carbide) and GaN (gallium nitride) on silicon, will likely continue to significantly increase power-conversion efficiency (Reference 1). However, good ol' silicon power MOSFETs currently dominate the market and will continue to do so for several more years, APEC (Applied Power Electronics Conference), which this year takes place on Feb 5 through Feb 9 in Orlando, FL, is traditionally the biggest showcase for power-switching devices and a good venue for checking in on power-MOSFET technology.