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Multiple logic styles for low power 4:1 multiplexer in 45 nm technology

机译:采用45 nm技术的低功耗4:1多路复用器的多种逻辑样式

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Complementary Metal Oxide Semiconductor (CMOS) memory elements and data control structures consists of multiplexer as the basic components. The low-power consumption is one of the most important concerns of the system design. Different styles for low power designs in high speed applications have been developed. In this paper, the multiple logic styles are used to design a low power 4:1 Multiplexer (MUX). The leakage current, power consumption, delay and transistor count are compared for different logic styles of 4:1 MUX. The transmission gate multiplexer consumes low power compared with respect to other logic styles. Static MUX consists of the more transistors in compare to the NMOS MUX. The outcome represents that NMOS pass transistor logic multiplexer performs the task with minimal delay and minimum power consumption with fewer numbers of transistors. The designed circuit is realised in 45 nm technology, from a 0.7 V supply voltage under 27℃.
机译:互补金属氧化物半导体(CMOS)存储元件和数据控制结构以多路复用器为基本组件。低功耗是系统设计中最重要的问题之一。对于高速应用中的低功耗设计,已经开发出不同的样式。在本文中,多种逻辑样式用于设计低功耗4:1多路复用器(MUX)。比较了4:1 MUX的不同逻辑样式的泄漏电流,功耗,延迟和晶体管数。与其他逻辑样式相比,传输门多路复用器消耗的功率较低。与NMOS MUX相比,静态MUX由更多的晶体管组成。结果表明,NMOS通过晶体管逻辑多路复用器以最少的延迟和最少的功耗以及更少的晶体管数量执行了任务。设计的电路以45 nm技术,在27℃下的0.7 V电源电压下实现。

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