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首页> 外文期刊>International Journal of Quantum Chemistry >Defects and ionic conductivity in TlCl, TlBr, and TlI at high pressure and temperature
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Defects and ionic conductivity in TlCl, TlBr, and TlI at high pressure and temperature

机译:TlCl,TlBr和TlI在高压和高温下的缺陷和离子电导率

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摘要

High-pressure and temperature experiments of ionic conductivity and crystal structure of TlCl, TlBr, and TlI reveal discontinuous and reproducible increases in conductivity on heating at constant pressure but no evidence for structural change from high-pressure and -temperature X-ray diffraction data. For each compound, the pressure-dependent solid-solid boundary between the low- and the high-temperature conductivity regions extrapolates to a l-atm temperature value, which coincides with its l-atm melting temperature to within 15 K, This behavior is discussed in terms of solid state partial disorder, caused by a sudden increase in defects, and is linked to the highly polarizable Tl+ site. Concomitant increases in charge carrier concentration and mobility and decreases in activation energy without structural transformation emphasize the importance of nonstructural factors in fast-ion conduction. (C) 1998 Academic Press. [References: 28]
机译:TlCl,TlBr和TlI的离子电导率和晶体结构的高压和高温实验表明,在恒定压力下加热时,电导率不连续且可重现增加,但高压和高温X射线衍射数据均未显示结构变化的证据。对于每种化合物,低温和高温电导率区域之间的压力相关固-固边界外推至l-atm温度值,该温度值与其l-atm熔化温度一致,为15 K以内。就固态局部无序而言,是由缺陷的突然增加引起的,并与高度极化的Tl +位点相关。在不进行结构转变的情况下,伴随着电荷载流子浓度和迁移率的增加以及活化能的降低,强调了非结构因素在快速离子传导中的重要性。 (C)1998年学术出版社。 [参考:28]

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