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Electronic Structures and Luminescence Properties of YNbO_4 and YNbO_4:Bi

机译:YNbO_4和YNbO_4:Bi的电子结构和发光性质

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The luminescence properties of fergusonite phosphors, YNbO_4 and YNbO4:Hi, were investigated with photoluminescence (PL) measurements and first-principles calculations. The various ab- sorption spectra of these phosphors have been interpreted using the calculated partial density of states in the framework of density functional theory. We were able to determine the charge- transfer gap of YNbO4, 4.3 eV, that agrees well with our experi- mental measurement. From our analysis of PL spectra and calculations, we have investigated the Hi effect in YNbO_4:Hi, which shows an excitation peak at a longer wavelength than YNbO_4, We have found that the charge transfer from oxygen to bismuth is the main reason for the peak position shift in the excitation spectra.
机译:用光致发光(PL)测量和第一性原理计算研究了洋红铁矿荧光粉YNbO_4和YNbO4:Hi的发光特性。这些荧光粉的各种吸收光谱已经在密度泛函理论的框架下使用计算出的部分状态密度进行了解释。我们能够确定YNbO4的电荷转移间隙为4.3 eV,这与我们的实验测量结果非常吻合。通过我们对PL光谱的分析和计算,我们研究了YNbO_4:Hi中的Hi效应,它在一个比YNbO_4更长的波长处显示了一个激发峰,我们发现从氧到铋的电荷转移是产生该峰的主要原因激发光谱中的位置偏移。

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