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首页> 外文期刊>International Journal of Quantum Chemistry >Polarized X-ray absorption spectroscopic study on mercuric bromide intercalated Bi2Sr2CaCu2Oy single crystal
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Polarized X-ray absorption spectroscopic study on mercuric bromide intercalated Bi2Sr2CaCu2Oy single crystal

机译:溴化汞嵌入Bi2Sr2CaCu2Oy单晶的X射线吸收光谱研究

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摘要

Polarized X-ray absorption spectroscopic experiments have been carried out for the mercuric bromide intercalated Bi2Sr2CaCU2Oy single crystal, in order to understand the variation of anisotropic resistivities upon HgBr2 intercalation as well as to probe the electronic structure of HgBr2 intercalate. The Br K- and Bi L-III-edge spectra indicate a significant electron transfer from bismuth to bromine, implying an overlap between Bi 6s and Br 4p orbitals. From the Hg L-III- and Br K-edge data, it is also found that HgBr2 intercalation gives rise to an electron localization in the (Hg-Br) bond, which leads to poor electronic conduction along the intercalant layer. In this context, the semiconducting out-of-plane resistivity of HgBr2 intercalate can be explained by the poor conductivity of the intercalated HgBr2 layer, even though the orbital overlap between Bi and Br facilitates the electron conduction between host and guest along the c-axis. (C) 2001 Academic Press. [References: 22]
机译:为了理解溴化汞嵌入层上的各向异性电阻率的变化,并探究了溴化汞的电子结构,已经对溴化汞嵌入Bi2Sr2CaCU2Oy单晶进行了极化X射线吸收光谱实验。 Br K-和Bi L-III边缘光谱表明从铋到溴有明显的电子转移,这意味着Bi 6s和Br 4p轨道之间存在重叠。从Hg L-III-和Br K-edge数据,还发现HgBr2插层会引起(Hg-Br)键中的电子局部化,从而导致沿插层的电子传导性变差。在这种情况下,HgBr2插层的半导体面外电阻率可以用插层的HgBr2层的差电导率来解释,即使Bi和Br之间的轨道重叠有利于主体和客体沿c轴的电子传导。 (C)2001学术出版社。 [参考:22]

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