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RELATIONSHIP BETWEEN CRYSTAL STRUCTURE AND ELECTRICAL PROPERTIES OF ND(CR1-XFEX)O-3

机译:ND(CR1-XFEX)O-3的晶体结构与电性能的关系

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Perovskite-type Nd(Cr1-xFex)O-3 was synthesized in the range 0.0 less than or equal to x less than or equal to 1.0, and has the orthorhombic GdFeO3-type structure with space group Pnma. The increase of the (Cr, Fe)-O distance and the effective magnetic moment (mu(eff)) indicates that the Fe3+ ion is in the high-spin state with the (d epsilon)(3)(d gamma)(2) electronic configuration. Rietveld analysis indicates that the increase of the (Cr, Fe)-O distance and the decrease of the angles for (Cr, Fe)-O(1 and 2)-(Cr, Fe) make pi-bonding decrease. From the electrical resistivity (rho) measurement, Nd(Cr1-xFex)O-3 is a semiconductor with activation energy (E-a) approximate to 0.16- approximate to 0.89 eV. The temperature independence of the Seebeck coefficient (alpha) indicates that the mobility (mu) decreases With increasing x. (C) 1997 Academic Press. [References: 19]
机译:钙钛矿型Nd(Cr1-xFex)O-3的合成范围为0.0小于或等于x小于或等于1.0,并具有空间群为Pnma的正交晶GdFeO3-型结构。 (Cr,Fe)-O距离和有效磁矩(mu(eff))的增加表明Fe3 +离子处于(d epsilon)(3)(dγ)(2)处于高自旋状态)电子配置。 Rietveld分析表明(Cr,Fe)-O距离的增加和(Cr,Fe)-O(1和2)-(Cr,Fe)的夹角的减小使pi键减小。根据电阻率(rho)测量,Nd(Cr1-xFex)O-3是活化能(E-a)大约为0.16-大约0.89 eV的半导体。塞贝克系数(α)的温度独立性表明,迁移率(μ)随着x的增加而降低。 (C)1997学术出版社。 [参考:19]

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