Mg-doping experiment and electrical transport measurement of boron nanobelts

摘要

We measured electrical conductance of single crystalline boron nanobelts having alpha-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. The pure boron nanobelt is a p-type semiconductor and its electrical conductivity was estimated to be on the order of 10(-3) (Omega cm)(-1) at room temperature. The carrier mobility of pure boron nanobelt was measured to be on the order of 10(-3) (cm(2) Vs(-1)) at room temperature and has an activation energy of similar to 0.19 eV. The Mg-doped boron nanobelts have the same a-tetragonal crystalline structure as the pristine nanobelts. After Mg vapor diffusion, the nanobelts were still semiconductor, while the electrical conductance increased by a factor of 100-500. Transition to metal or superconductor by doping was not observed. (c) 2006 Elsevier Inc. All rights reserved.