首页> 外文期刊>International Journal of Quantum Chemistry >Electronic band structure study of A(2)Mo(9)S(11) (A=K, Rb) and K1.8Mo9S11
【24h】

Electronic band structure study of A(2)Mo(9)S(11) (A=K, Rb) and K1.8Mo9S11

机译:A(2)Mo(9)S(11)(A = K,Rb)和K1.8Mo9S11的电子能带结构研究

获取原文
获取原文并翻译 | 示例
           

摘要

The electronic band structures of A(2)Mo(9)S(11) (A = K, Rb) and K1.8Mo9S11 are examined by extended Huckel tight binding calculations. K2Mo9S11 and K1.8Mo9S11 are metallic and exhibit resistivity anomalies below similar to 115 and similar to 80 K, respectively. The origin of these anomalies is explained in terms of their Fermi surfaces. Our study indicates that the resistivity anomalies of these compounds are caused by the partial nesting of their two-dimensional Fermi surfaces and that both K2Mo9S11 and Rb2Mo9S11 should exhibit a charge density wave phenomenon. (C) 2000 Academic Press. [References: 16]
机译:通过扩展的Huckel紧密结合计算来检查A(2)Mo(9)S(11)(A = K,Rb)和K1.8Mo9S11的电子能带结构。 K2Mo9S11和K1.8Mo9S11是金属,电阻率异常分别低于115和80K。这些异常的起源用费米表面来解释。我们的研究表明,这些化合物的电阻率异常是由它们的二维费米表面的部分嵌套引起的,并且K2Mo9S11和Rb2Mo9S11均应表现出电荷密度波现象。 (C)2000年学术出版社。 [参考:16]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号