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Nanopit generation on HOPG surface induced by CAFM electric lithography

机译:CAFM电光刻在HOPG表面产生纳米坑

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Nanopits in the diameter of sub-hundred and hundreds of nanometres were generated under different voltage magnitudes by conductive atomic force microscope (CAFM) electric lithography method in ambient environment. The pit lithography was conducted through applying conductive probe to measure the I-V curve during AFM contact state. The pit patterns were generated at the position beneath the tip along the I-V curve measurement process. By comparing the geometry sizes of the formed nanopits and their process current evolution under different bias voltages, the nano-machining phenomenon of CAFM electric point lithography was studied and the nanoscale electrical breakdown was suggested as the possible mechanism besides the local anodic oxidation in the high voltage range.
机译:在周围环境下,采用导电原子力显微镜(CAFM)电光刻技术,在不同的电压大小下,产生了直径小于数百纳米的纳米坑。通过应用导电探针在AFM接触状态下测量I-V曲线来进行坑式光刻。沿I-V曲线测量过程在尖端下方的位置生成了凹坑图案。通过比较所形成的纳米坑的几何尺寸及其在不同偏置电压下的工艺电流演变,研究了CAFM电点刻蚀的纳米加工现象,并提出了纳米尺度的电击穿是除高温下局部阳极氧化以外的可能机理。电压范围。

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