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Cell permeabilization and inhibition of voltage-gated Ca 2+ and Na + channel currents by nanosecond pulsed electric field

机译:纳秒脉冲电场对细胞通透性和电压门控Ca 2+和Na +通道电流的抑制

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Previous studies have found that nanosecond pulsed electric field (nsPEF) exposure causes long-term permeabilization of the cell plasma membrane. In this study, we utilized the whole-cell patch-clamp method to study the nsPEF effect on currents of voltage-gated (VG) Ca 2+ and Na + channels (I Ca and I Na) in cultured GH3 and NG108 cells. We found that a single 300 or 600ns pulse at or above 1.5-2kV/cm caused prolonged inhibition of I Ca and I Na. Concurrently, nsPEF increased a non-inactivating "leak" current (I leak), presumably due to the formation of nanoelectropores or larger pores in the plasma membrane. The nsPEF effects were similar in cells that were exposed intact and subsequently brought into the whole-cell recording configuration, and in cells that were first brought into the whole-cell configuration and then exposed. Although both I leak and the inhibition of VG currents were enhanced at higher E-field levels, these two nsPEF effects showed relatively weak correlation with each other. In some cells, I leak increased 10-fold or more while VG currents remained unchanged. At longer time intervals after exposure (5-15min), I Ca and I Na could remain inhibited although I leak had largely recovered. The causal relation of nsPEF inhibitory effects on VG currents and permeabilization of the plasma membrane is discussed.
机译:先前的研究发现,纳秒脉冲电场(nsPEF)暴露会导致细胞质膜的长期通透性。在这项研究中,我们利用全细胞膜片钳方法研究了nsPEF对培养的GH3和NG108细胞中的电压门控(VG)Ca 2+和Na +通道(I Ca和I Na)电流的影响。我们发现,以1.5-2kV / cm或更高的单个300或600ns脉冲会导致I Ca和I Na的抑制时间延长。同时,nsPEF增加了非灭活的“泄漏”电流(I泄漏),这可能是由于在质膜中形成了纳米电孔或更大的孔。 nsPEF的影响在完整暴露并随后进入全细胞记录配置的细胞中以及在先进入全细胞配置然后暴露的细胞中相似。尽管在较高的电场水平下,I泄漏和对VG电流的抑制都增强了,但这两种nsPEF效应相互之间显示出相对较弱的相关性。在某些电池中,我的泄漏增加了10倍或更多,而VG电流保持不变。暴露后较长时间间隔(5-15分钟),尽管我的渗漏已基本恢复,但I Ca和I Na仍可被抑制。讨论了nsPEF抑制作用对VG电流和质膜通透性的因果关系。

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