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A phase field dislocation dynamics model for a bicrystal interface system: An investigation into dislocation slip transmission across cube-on-cube interfaces

机译:双晶界面系统的相场位错动力学模型:跨立方晶间界面的位错滑移传输研究

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In this work, we present a phase field dislocation dynamics formulation designed to treat a system comprised of two materials differing in moduli and lattice parameters that meet at a common interface. We apply the model to calculate the critical stress tau(crit) required to transmit a perfect dislocation across the bimaterial interface with a cube-on-cube orientation relationship. The calculation of tau(crit) accounts for the effects of: 1) the lattice mismatch (misfit or coherency stresses), 2) the elastic moduli mismatch (Koehler forces or image stresses), and 3) the formation of the residual dislocation in the interface. Our results show that the value of tau(crit) associated with the transmission of a dislocation from material 1 to material 2 is not the same as that from material 2 to material 1. Dislocation transmission from the material with the lower shear modulus and larger lattice parameter tends to be easier than the reverse and this apparent asymmetry in tau(crit) generally increases with increases in either lattice or moduli mismatch or both. In efforts to clarify the roles of lattice and moduli mismatch, we construct an analytical model for tau(crit) based on the formation energy of the residual dislocation. We show that path dependence in this energetic barrier can explain the asymmetry seen in the calculated tau(crit) values. Significantly, the analysis reveals that tau(crit) scales with a((2))G((2))/a((1))+a((2)) (a((1))/a((2)) - G((1)/)G((2)))(2), where G is the shear modulus, a isthe lattice parameter, and the superscripts (1) and (2) indicate quantities for material 1 and material 2, respectively. Published by Elsevier Ltd.
机译:在这项工作中,我们提出了一种相场位错动力学公式,该公式旨在处理由模数和晶格参数不同的两种材料组成的系统,这些材料在同一界面处相遇。我们应用该模型来计算临界应力tau(crit),该临界应力tau(crit)可以通过双材料界面以立方对立方的方向关系传输完美的位错。 tau(crit)的计算考虑了以下影响:1)晶格失配(失配或相干应力),2)弹性模量失配(Koehler力或图像应力),以及3)残余位错形成接口。我们的结果表明,与位错从材料1到材料2的传递相关的tau(crit)值与从材料2到材料1的位错的传递值不同。具有较低剪切模量和较大晶格的材料的位错传递参数往往比反向参数更容易,并且tau(crit)的这种明显不对称性通常会随着晶格或模量失配或两者的增加而增加。为了阐明晶格和模量失配的作用,我们基于残余位错的形成能构建了tau(crit)的分析模型。我们表明,在此能量屏障中的路径依赖性可以解释在计算出的tau(crit)值中看到的不对称性。有意义的是,该分析表明tau(crit)与a((2))G((2))/ a((1))+ a((2))(a((1))/ a((2) ))-G((1)/)G((2)))(2),其中G为剪切模量,a为晶格参数,上标(1)和(2)表示材料1和材料的数量2,分别。由Elsevier Ltd.发布

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