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Numerical calculation of electron energy states for nanoscopic InAs/GaAs quantum rings

机译:纳米InAs / GaAs量子环电子能态的数值计算

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In this paper we study the electron energy states for nanoscopic semiconductor quantum rings. The effective one-band Hamiltonian approximation and the Ben Daniel-Duke boundary conditions axe simultaneously considered in our three-dimensional (3D) model. The rectangular and ellipsoidal torus-shaped rings have been investigated with the 3D model. The proposed model is numerically solved with nonlinear iterative method. This computational method calculates the solution without any fitting parameters and is robust for all simulation cases. For InAs/GaAs quantum rings, it is found that (1) there is a significant energy difference between the 2D and 3D models; (2) the electron energy state depends strongly on the ring shape and size; and (3) the dependency of the energy state on an external magnetic field is different from conventional 1D/2D periodical result. We find the electron energy state nonperiodically oscillates versus the applied magnetic field which is in agreement with the experimental observation. [References: 35]
机译:在本文中,我们研究了纳米级半导体量子环的电子能态。在我们的三维(3D)模型中同时考虑了有效的一带哈密顿近似和Ben Daniel-Duke边界条件。已使用3D模型研究了矩形和椭圆形的环形环。用非线性迭代方法对提出的模型进行数值求解。这种计算方法无需任何拟合参数即可计算解决方案,并且在所有模拟情况下均十分可靠。对于InAs / GaAs量子环,发现(1)2D和3D模型之间存在明显的能量差; (2)电子能态在很大程度上取决于环的形状和大小; (3)能量状态对外部磁场的依赖性不同于常规的1D / 2D周期性结果。我们发现电子能态相对于所施加的磁场非周期性地振荡,这与实验观察相符。 [参考:35]

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