Positron annihilation in SiC

摘要

Valence electron and positron charge densities in SiC are obtained from wave functions derived in a model pseudopotential bandstructure calculation. It is observed that the positron density is maximum in the open interstices and is excluded not only from the ion cores but also, to a considerable degree, from the valence bonds. Electron-positron momentum densities are calculated for the (001-110) plane. The results axe used to analyze the positron effect in large gap semiconductors. [References: 28]