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首页> 外文期刊>International journal of mass spectrometry >Comprehensive modelling of secondary-ion energy spectra measured with a magnetic sector field instrument: II. Evaluation of experimental data
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Comprehensive modelling of secondary-ion energy spectra measured with a magnetic sector field instrument: II. Evaluation of experimental data

机译:用磁场扇形仪测量的二次离子能谱的综合模型:II。实验数据评估

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In the preceding paper an approach was described that allows measured secondary-ion energy spectra to be correlated with the original energy distribution. Here the model was applied to analyse energy spectra of Cs~+ ions sputtered from a Cs bombarded Si sample. The aim was to show that relevant properties of the employed IMS-4f sector field mass spectrometers as well as the mean surface binding energy of the Cs~+ ions can be derived in one effort. The novel results may be summarised as follows. (i) The width of the energy slit can be determined in situ by comparing integral intensities for the chosen and the fully opened slit, the latter of known size. (ii) Pronounced yield losses occur if the width-to-thickness ratio of the slit is reduced below about 0.1. (iii) The broadening of energy spectra is predominantly defined by the slit width. Unexpectedly, the size of the circular contrast aperture plays only a minor role. The reason needs to be clarified. (iv) Measured spectra can be reproduced with a remarkable accuracy, better than ±8% throughout the whole spectrum. The origin of the energy scale can be determined with an uncertainty of ±0.05 eV. (v) Beyond a characteristic energy E_c the transmission decreases more rapidly with increasing emission energy E than the expected E_c/E fall-off. The difference is probably due to the detuning of the immersion lens, an action inevitably associated with increasing target-bias offset. (vi) The surface binding energy E_s of Cs~+ ions, derived from spectra measured with the largest contrast aperture, turned out to be surprisingly high, 3.9 ± 0.2 eV. Evidently, the Cs~+ ions were emitted from sites featuring very strong ionic bonding. The derived value of E_s presumably represents the centroid (E_s) of a spectrum of binding energies which reflect different local configurations of damage around the Cs ions. Considering the much lower binding energy of adsorbed Cs atoms, we have to conclude that sputtered ions and neutrals do not exhibit the same energy spectrum. Hence the previous practise of using one global ionisation probability to correlate secondary ion emission with the sputtering of neutral atoms needs to be abandoned.
机译:在先前的论文中,描述了一种方法,该方法允许将测得的次级离子能谱与原始能量分布相关。在此模型被用于分析从Cs轰击的Si样品溅射的Cs〜+离子的能谱。目的是表明可以一劳永逸地得出所用IMS-4f扇形质谱仪的相关特性以及Cs〜+离子的平均表面结合能。新颖的结果可以总结如下。 (i)能量狭缝的宽度可以通过比较所选狭缝和完全打开的狭缝的积分强度来原位确定,后者的大小已知。 (ii)如果狭缝的宽度与厚度之比减小到约0.1以下,则会产生明显的屈服损失。 (iii)能谱的扩展主要由狭缝宽度决定。出乎意料的是,圆形对比孔的大小仅起很小的作用。原因需要澄清。 (iv)可以非常显着地复制测量的光谱,在整个光谱中都优于±8%。能量标度的起源可以确定为±0.05 eV的不确定性。 (v)除了特征能量E_c以外,随着发射能量E的增加,透射率的下降比预期的E_c / E下降更快。差异可能是由于浸入式透镜的失谐所致,这一动作不可避免地与增加的目标偏置偏移有关。 (vi)Cs〜+离子的表面结合能E_s源自具有最大对比孔径的光谱,结果令人惊讶地很高,为3.9±0.2 eV。显然,Cs〜+离子从具有非常强的离子键合能力的位点发出。 E_s的推导值大概代表了结合能谱的质心(E_s),该能反映了Cs离子周围损伤的不同局部构型。考虑到吸附的Cs原子的结合能低得多,我们必须得出结论,溅射的离子和中性原子不会显示相同的能谱。因此,先前的使用一个整体电离概率将次级离子发射与中性原子溅射关联起来的做法需要放弃。

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