High temperature electrical conductivity in Ga and In solubility limit region in ZnS

摘要

High temperature electrical conductivity (HTEC) and solubility measurements of Ga and In were performed in ZnS. To investigated Ga and In solubility in ZnS under the controlled vapour pressure of Zn, a special construction of quartz ampoules were used. Ga and In solubility isotherms in ZnS are given. At high temperatures and at low concentrations, Ga and In act as a single donor. At high zinc pressures, outdiffusion of gallium and indium occurs. The change of the solubility of Ga or In is reflected in ZnS HTEC isotherms. If doped at the same doping conditions, ZnS:Ga and ZnS:In had the same HTEC absolute values despite the differences in Ga and In solubilities.