ENGINEERING THE BARRIER OF QUANTUM DOTS-IN-A-WELL (DWELL) INFRARED PHOTODETECTORS FOR HIGH TEMPERATURE OPERATION

摘要

Reduction in the dark current and improvement in signal to noise ratio in the quantum dots in a well infrared photodetectors using resonant tunneling barriers have been demonstrated. Ultra-low dark current levels and high detectivity of 3×10~(10) cm.Hz~(1/2)/W at 77K for f/2 optics has been obtained for longwave infrared detection. In another experiment, the ability to control the excited state in the DWELL has been demonstrated by systematically varying the quantum well thickness. These detectors demonstrate high operating temperature with high detectivity values, even for high operating temperatures.