p-Type oxides for use in transparent diodes

摘要

Several p-type oxides of the delafossite structure have been investigated in the hope that the conductivity and transparency will be high enough to render them useful in the manufacture of transparent p-n junction diodes and other transparent devices. The highest conductivity achieved to date has been 220 S/cm in CuCr1-xMgxO2 thin films. Oxygen intercalation in CuSc1-xMgxO2+y films improves the conductivity at the expense of optical transparency. We have improved the conductivity of CuGaO2-based films from 0.02 to 1 S/cm, by substitution of Fe for Ga. p-Type conductivity has been demonstrated in an Ag-based delafossite film. A sputter-deposited AgCoO2 film has a conductivity of 0.2 S/cm, a Seebeck coefficient of 230 muV/K and a band gap of 4.1 eV at room temperature. CuNi2/3Sb1/3O2 films have been produced that are p-type conductors when doped with Sn. (C) 2002 Elsevier Science B.V. All rights reserved. References: 23