首页> 中文期刊> 《中国科学:物理学 力学 天文学(英文版)》 >Enhancement of light output powers of GaN-based light emitting diodes with textured indium tin oxide transparent layer by using corrosive liquid

Enhancement of light output powers of GaN-based light emitting diodes with textured indium tin oxide transparent layer by using corrosive liquid

         

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    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    College of Information Science and Engineering Wuhan University of Science & Technology Wuhan 430081 China;

    Sanan Optoelectronics Co. Ltd. Xiamen 361009.China;

    Sanan Optoelectronics Co. Ltd. Xiamen 361009.China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

    Key Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials & Technology South China Normal University Guangzhou 510631 China;

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