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Design and Performance Verification of Cache RAM

机译:缓存RAM的设计和性能验证

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This present the design of a L3 (level-3) cache Random Access Memory (RAM), paper has described last level cache memory structure, which is designed mainly to improve the timing, reduce the power consumption and better performance. Functional verification as well as pre layout and post layout STA (Static Timing Verification) and ERC (Electric Rule Check) verifications are done on the 3MB cache. The cache hierarchy design in existing SMT (Simultaneous Multi Threading) and superscalar processors is optimized for latency, but not for bandwidth. The size of the L1 (level-1) data cache did not scale over the Past decade. Instead, larger unified L2 (level-2) and L3 caches were introduced. SDP (Structural Data Path) methodology is better than the RLS (RTL to Logic Syntheses) methodology for data path configurations. Simulation results are reported in support of the design and also presented the verification results.
机译:本文介绍了L3(第3级)高速缓存随机存取存储器(RAM)的设计,论文描述了最后一级的高速缓存存储器结构,其设计主要是为了改善时序,降低功耗和提高性能。功能验证以及布局前和布局后STA(静态时序验证)和ERC(电规则检查)验证均在3MB缓存上完成。现有SMT(同步多线程)和超标量处理器中的缓存层次结构设计针对延迟进行了优化,但并未针对带宽进行优化。在过去十年中,L1(级别1)数据缓存的大小未扩展。取而代之的是,引入了更大的统一L2(二级)和L3缓存。对于数据路径配置,SDP(结构数据路径)方法优于RLS(逻辑至RTL)方法。报告了仿真结果以支持设计并提供了验证结果。

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