Hydride Vapor-phase Epitaxial Growth of GaN Template on Patterned Sapphire Substrate and Its Properties

摘要

A GaN layer 4 in.in diameter and 8 μm thick without any buffer layer was grown on a patterned sapphire substrate by hydride vapor-phase epitaxy (HVPE). The GaN template exhibited the high quality with a full width at half maximum of 195 arcsec and 200 arcsec in the (0002) and (10-12) X-ray rocking curves, respectively. The calculated screw and edge dislocation densities of the GaN layer using X-ray data were 5.4 × 10~(-7)/cm~2 and 2.1 × 10~(-8)/cm~2, respectively. It may be possible to fabricate high-quality GaN templates on PSS using the HVPE method instead of metal-organic chemical vapor deposition.