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Ni segregation in the interfacial (Cu,Ni)_6Sn_5 intermetallic layer of Sn-0.7Cu-0.05Ni/Cu ball grid array (BGA) joints

机译:Ni-Sn-0.7Cu-0.05Ni / Cu球栅阵列(BGA)接头的(Cu,Ni)_6Sn_5金属间层中的Ni偏析

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摘要

Ni segregation in the interfacial (Cu,Ni)_6Sn_5 intermetallic layer of Sn-0.7Cu-0.05Ni/Cu BGA solder joints was investigated by using synchrotron micro X-ray fluorescence (XRF) analysis and synchrotron X-ray diffraction (XRD). Compared to Sn-0.7Cu/Cu BGA joints, Ni containing solder show suppressed Cu_3Sn growth in both reflow and annealed conditions. In as-reflowed Sn-0.7Cu-0.05Ni/Cu BGA joints, Ni was relatively homogenously distributed within interfacial (Cu,Ni)_6Sn_5. During subsequent annealing, the diffusion of Ni in Cu_6Sn_5 was limited and it remained concentrated adjacent the Cu substrate where it contributes to the suppression of Cu_3Sn formation at the interface between the Cu substrate and Cu_6Sn_5 intermetallics.
机译:利用同步加速器X射线荧光(XRF)分析和同步加速器X射线衍射(XRD)研究了Sn-0.7Cu-0.05Ni / Cu BGA焊点的(Cu,Ni)_6Sn_5金属间层中的Ni偏析。与Sn-0.7Cu / Cu BGA接头相比,含Ni焊料在回流和退火条件下均显示出抑制的Cu_3Sn生长。在回流的Sn-0.7Cu-0.05Ni / Cu BGA接头中,Ni相对均匀地分布在界面(Cu,Ni)_6Sn_5内。在随后的退火过程中,Ni在Cu_6Sn_5中的扩散受到限制,并且仍保持集中在Cu衬底附近,这有助于抑制Cu衬底与Cu_6Sn_5金属间化合物之间的界面处的Cu_3Sn形成。

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