FeFET Logic Circuits for Operating A 64 kb FeNAND Flash Memory Array

摘要

N- and p-channel ferroelectric-gate field-effect-transistors (FeFETs) were integrated for constructing bit-line- and block- selector circuits of 64 kb ferroelectric NAND (FeNAND) flash memory where the memory cells were also the FeFETs. Component unit circuits of the selectors were NOT- and 2-input-NAND logic circuits. Basic operations of the both test elements were demonstrated. The all-FeFET NOT-logic circuits showed good endurance. The all-FeFET bit-line- and block- selector circuits worked reasonably and enable us to analyze statistical distributions of electrical data of the 64 kb FeNAND memory cell array.