首页> 外文期刊>Integrated Ferroelectrics >SUBSTITUTION SITE OF LANTHANUM IONS IN LA-DOPED SrBi_4Ti_4O_(15) AND Bi_4Ti_3O_(12)-SrBi_4O_(15)
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SUBSTITUTION SITE OF LANTHANUM IONS IN LA-DOPED SrBi_4Ti_4O_(15) AND Bi_4Ti_3O_(12)-SrBi_4O_(15)

机译:LA DOPED中的镧系替代物Serbi_chti_Cho_(15)和Bi_chti_ZO_(12)-Serbi_Cho_(15)

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Ferroelectric ceramics of lanthanum-modified SrBi_4Ti_4O_(15) and Bi_4Ti_3O_(12)-SrBi_4O_(15) have been synthesized, and Raman spectrum measurements have been carried out at room temperature. The investigation on the Raman spectra suggest that La~(3+) ions prefer to occupy the A site in the case of x < 0.10, and at higher content they tend to be incorporated into Bi_2O_2 layers in the La-doped SrBi_4Ti_4O_(15). As for La-doped Bi_4Ti_3O_(12)-SrBi_4Ti_4O_(15), the critical content of the doping ions is 0.50. An interesting phenomenon has been noticed that the remnant polarization maximized at about the critical doping content. Thus, it can be concluded that the Bi_2O_2 layers have a very important effect on the properties in the bismuth layer-structured ferroelectric materials.
机译:合成了镧改性的SrBi_4Ti_4O_(15)和Bi_4Ti_3O_(12)-SrBi_4O_(15)的铁电陶瓷,并在室温下进行了拉曼光谱测量。对拉曼光谱的研究表明,在x <0.10的情况下,La〜(3+)离子倾向于占据A位,并且在更高的含量下,它们倾向于掺入La掺杂SrBi_4Ti_4O_(15)的Bi_2O_2层中。 。对于La掺杂的Bi_4Ti_3O_(12)-SrBi_4Ti_4O_(15),掺杂离子的临界含量为0.50。已经注意到一个有趣的现象,残余极化在大约临界掺杂含量处最大化。因此,可以得出结论,Bi_2O_2层对铋层结构的铁电材料的性能具有非常重要的影响。

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