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Ferroelectric Varactor Shunt Switches for Broadband Phase Control Applications

机译:用于宽带相位控制应用的铁电变容并联开关

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摘要

Our research group has recently demonstrated the operation of ferroelectric varactor shunt switches. The device operation is based on the nonlinear dielectric tunability of a barium strontium titanate (BST 60/40) thin-film sandwiched between two metal layers in a parallel plate configuration. A 4:1 change in the varactor capacitance has been achieved with a bias voltage <10 V, through optimization of the nanostructured BST thin-film fabrication process on high resistivity Si substrates. In this work, we investigated the varactor shunt switches for broadband phase control applications. Varactor shunt switches and cascaded shunt switches were used for phase control circuits, due to the large phase shifts possible as a result of the dc bias dependent tunability of the varactor. The differential phase shift can be defined as the difference between the phase of S_(21) at a dc bias voltage and zero-bias. The measured differential phase shift for a single varactor shunt switch was 30 +- 2 degrees between 8 and 26 GHz at 8 V dc bias. A cascaded varactor shunt switch resulted in a differential phase shift of 110 degrees +- 10 degrees over the bandwidth of 20 and 31 GHz.
机译:我们的研究小组最近演示了铁电变容并联开关的操作。器件的操作基于钛酸钡锶钡(BST 60/40)薄膜的非线性介电可调谐性,该薄膜夹在平行板配置中的两个金属层之间。通过优化在高电阻率Si衬底上的纳米结构BST薄膜制造工艺,在小于10 V的偏置电压下,变容二极管电容实现了4:1的变化。在这项工作中,我们研究了用于宽带相位控制应用的变容二极管并联开关。变容二极管并联开关和级联并联开关用于相位控制电路,这是由于变容二极管的直流偏置相关可调谐性可能导致较大的相移。差分相移可以定义为直流偏置电压下S_(21)的相位与零偏置之间的差。在8 V直流偏置下,在8至26 GHz之间,单个变容二极管并联开关的测量差分相移为30±2度。级联的变容二极管并联开关在20 GHz和31 GHz带宽上产生110度±10度的差分相移。

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