Ferroelectric Properties of Pb(Zr_(1-x),Ti_x)O_3 Prepared by Modified Metallo-Organic-Decomposition Process

摘要

Beneficial effect of nano-sized PZT powder incorporation on modifying the characteristics of Pb(Zr_(1-x),Ti_x)O_3, PZT films was demonstrated. The amorphous phase derived from metallo-organic-decomposition (MOD) process started to crystallize at a post-annealing temperature as low as 500 deg C and can withstand 650 deg C post-annealing temperature process without inducing the PbO-loss phenomenon. However, 500 deg C post-annealed PZT films still exhibit paraelectric properties, which can be ascribed to the co-existence of large proportion of amorphous phase, surrounding the crystalline phase. It needs at least 650 deg C post-annealing process to fully developed the pervoskite structure for PZT films. The remnant polarization (Pr) of the PZT films increases with the proportion of crystalline phase, achieving Pr = 24.9 (mu)C/cm~2 for 650 deg C annealed films, with coercive field (Hc) around Ec = 373 kV/cm.