IMPROVEMENT OF THE ELECTRICAL PROPERTIES OF PZT THIN FILMS USING TiO_2 BUFFER LAYER

摘要

Thin TiO_2 layers were sputter-deposited on Pt/Ti/SiO_2/Si wafers, as buffer layers for PZT thin film capacitors. It was found that TiO_2 buffers of less than 4-nm-thickness could assist in obtaining highly uniform PZT thin films with no second phase. The leakage current behaviors of the PZT based capacitor are improved, while retaining the ferroelectric properties of PZT thin films such as remanent polarization and coercive field. In addition, the uniform distribution of oxygen in PZT on TiO_2/Pt indicates that the TiO_2 buffer layer act as a barrier for lead-platinum reaction, as well as for oxygen diffusion.