Advanced LSI Embedded with FeRAM for Contactless IC Cards and its Manufacturing Technology

摘要

High performance LSIs embedded with ferroelectric random access memory (FeRAM) for contactless IC cards are now commercially available. The emphasis is placed on the materials solution with SrBi_2(Ta,Nb)_2O_9 (SBTN) which enables to exploit the potential performance of FeRAMs for composite logic/microcontroller LSIs operating at high speeds and low powers. The leading-edge 0.6-#mu#m and double-level-metal FeRAM technology produces microcontroller-embedded LSIs with 14-kbit or 64-kbit FeRAM. A mature 0.8-#mu#m and single-level-metal process has been built to maximize the die yield. Yields exceeding 90 percent indicate the excellent process stability. Product qualification data have proven the robust FeRAM technologies.