A constant reference Bit-line voltage data sensing technique without reference cell for 1T1C FeRAMs

摘要

A novel data-sensing scheme by bit line charge sharing without reference cell for 1T1C FRAMs is presented. The sense amplifier identifies the stored data using a constant reference voltage. The stability of sensing is greatly improved approaching to DRAM level. The simulated results show that the sensing margin is improved by about 48 percent and about 130 percent with respect to remnant charge reduction and imprint shift, respectively.