High operating temperature SWIR p(+)-n FPA based on MBE-grown HgCdTe/Si(013)

摘要

The characteristics of SWIR (1.6-3 mu m) 320 x 256 and 1024 x 1024 focal plane arrays (FPA's) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p-n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK (C) 2016 Elsevier B.V. All rights reserved.