Growth and characterization of copper, indium and copper-indium alloy films non-aqueous method of electrodeposition

摘要

A new non-aqueous method for electrodeposition of copper, indium and copper indium alloy films, ethylene glycol has been used as the solvent which is non-toxic and non-hazard bath. All the source materials are readily soluble in this bath and they have higher working temperature (>= 160 degrees C). The copper films prepared in ethylene glycol based bath are preferred (111) oriented with grains well connected to each other indicates the epitaxial growth. The indium film has been observed in semi-molten state with intense (101) reflection. The Cu-In alloy film prepares at -1.1 V (Pt) is copper rich but the ratio tends to be 1.0 in the bulk of the film. Multiphase deposits are observed with grains which are spherical and well connected to each other. The resistivity and carrier concentration of the as-deposited copper and copper indium alloy films are found to be 0.2 Omega-cm, 9.9x10(15) per cm(3) and 2.5 Omega-cm and 5.5 x 10(17) per cm(3), respectively. The as-deposited films are found to be resistive but the resistance decreases when the films are annealed at moderate temperature.